Millisecond minority carrier lifetimes in n-type multicrystalline silicon

被引：69

作者：

Cuevas, A ^{[1
]}

Kerr, MJ

Samundsett, C

Ferrazza, F

Coletti, G

机构：

[1] Australian Natl Univ, Fac Engn & IT, Canberra, ACT 0200, Australia

[2] Eurosolare SpA, I-00048 Neuttuno, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1529089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were measured for relatively lowly doped, 2-3 Omegacm, wafers. The lifetime was found to decrease for lower resistivities, still reaching 500 mus for 0.9 Omegacm and 100 mus for 0.36 Omegacm. Several important findings are reported here: (i) achievement of carrier lifetimes in the millisecond range for mc-Si, (ii) effectiveness of phosphorus gettering in n-type mc-Si, and (iii) demonstration of good stability under illumination for n-type mc-Si. (C) 2002 American Institute of Physics.

引用

页码：4952 / 4954

页数：3

共 11 条

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