Manganese-doped ZnO nanobelts for spintronics

被引：316

作者：

Ronning, C

Gao, PX

Ding, Y

Wang, ZL

Schwen, D

机构：

[1] Georgia Inst Technol, Sch Mat Sci, Atlanta, GA 30332 USA

[2] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.1645319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn+ ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 degreesC, the implanted Mn remains in the ZnO nanobelts and the matrix recovers both in structure and luminescence. The produced high-quality ZnO:Mn nanobelts are potentially useful for spintronics. (C) 2004 American Institute of Physics.

引用

页码：783 / 785

页数：3

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