Spontaneous crystallographic instabilities of Pb nanoparticles in a SiO matrix

被引:14
作者
Be'er, Avraham [1 ]
Kofman, Richard
Phillipp, Fritz
Lereah, Yossi
机构
[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel
[2] Univ Nice, Phys Mat Condensee Lab, Unite Assoc 6622, CNRS, F-06108 Nice 2, France
[3] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 07期
关键词
D O I
10.1103/PhysRevB.76.075410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The phenomenon of spontaneous instabilities of Pb nanoparticles was studied quantitatively by time-resolved transmission electron microscopy. The phenomenon rates were studied by high-resolution electron microscopy and by dark field microscopy. The origin of the phenomenon as a radiation effect of the high voltage electron beam was excluded by finding the same rates at 200 and 1250 kV electron beams, below and above the threshold for the knock-on process, respectively. The dependence of phenomenon rate on the particles' size was found to be inversely proportional to the particle volume. The temperature was found to influence both the probability for a particle to be in the unstable state and the rate of instabilities. The results are compared with our recent results obtained for spontaneous instabilities of Bi nanoparticles.
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