High-speed pin ultraviolet photodetectors fabricated on GaN

被引：32

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Brown, DL ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 18期

关键词：

D O I：

10.1049/el:19981272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of similar to 90ps and bandwidths of similar to 1.6GHz at -30V. This is the fastest speed for a GaN-based photodetector reported to date.

引用

页码：1779 / 1781

页数：3

共 6 条

[1] Electron transport characteristics of GaN for high temperature device modeling
Albrecht, JD
Wang, RP
Ruden, PP
Farahmand, M
Brennan, KF
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4777 - 4781
[2] Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition
Carrano, JC
Li, T
Grudowski, PA
Eiting, CJ
Lambert, D
Schaub, JD
Dupuis, RD
Campbell, JC
[J]. ELECTRONICS LETTERS, 1998, 34 (07) : 692 - 694
[3] LI T, 1998, UNPUB OPT LETT
[4] Oguzman IH, 1996, MATER RES SOC SYMP P, V395, P479
[5] Low noise p-pi-n GaN ultraviolet photodetectors
Osinsky, A
Gangopadhyay, S
Gaska, R
Williams, B
Khan, MA
Kuksenkov, D
Temkin, H
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2334 - 2336
[6] High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
Xu, GY
Salvador, A
Kim, W
Fan, Z
Lu, C
Tang, H
Morkoc, H
Smith, G
Estes, M
Goldenberg, B
Yang, W
Krishnankutty, S
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2154 - 2156

← 1 →