Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP

被引：24

作者：

Georgiev, N

Dekorsy, T

Eichhorn, F

Helm, M

Semtsiv, MP

Masselink, WT

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.1592315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied intersubband absorption in strain compensated InxGa1-xAs/AlAs/InyAl1-yAs multiple quantum wells and superlattices grown on InP. X-ray diffraction shows that the layers are pseudomorphically strained and exhibit slight compositional grading of the interfaces. Owing to the high AlAs barriers, the intersubband absorption can be tailored to wavelengths shorter than 2 mum. In some samples, a small, but non-negligible absorption is also observed with s-polarized light. (C) 2003 American Institute of Physics.

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页码：210 / 212

页数：3

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