Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

被引：11

作者：

Gopal, AV ^{[1
]}

Yoshida, H ^{[1
]}

Simoyama, T ^{[1
]}

Georgiev, N ^{[1
]}

Mozume, T ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 02期

关键词：

all-optic switch; antimony-based quantum wells; intersubband transition; relaxation time; saturation intensity; switching energy;

D O I：

10.1109/JQE.2002.807181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a novel intersubband material system based on strained InGaAs-AlAs-AlAsSb quantum wells that exhibits a very low, 3 fJ/mum(2), saturation intensity and about 2-ps carrier-relaxation time at 1.68 mum. We performed a density matrix calculation to estimate the saturation intensity by simulating the pulsed excitation conditions of the experiment. These studies indicate slow dephasing time and reduced inhomogeneity as the possible mechanisms for the observed large nonlinearity. A detailed dephasing time calculation shows that rather than the reduction in the electron effective mass in these strained quantum wells (QWs), the effect of enhanced concentration of doped carriers in these QWs with reduced inhomogeneity could be the origin of slow dephasing and the observed large nonlinearity.

引用

页码：299 / 305

页数：7

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