Large intersubband nonlinearity for all-optical switching at 1.72μm in Sb-based quantum wells

被引：1

作者：

Gopal, AV ^{[1
]}

Yoshida, H ^{[1
]}

Neogi, A ^{[1
]}

Mozume, T ^{[1
]}

Georgiev, N ^{[1
]}

Simoyama, T ^{[1
]}

Wada, O ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

OPTICAL DEVICES FOR FIBER COMMUNICATION III | 2002年 / 4638卷

关键词：

intersubband transitions; all-optic switch; saturation intensity; relaxation time; nonlinearity;

D O I：

10.1117/12.467468

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Based on our line shape analysis of temperature dependent absorption spectra on InGaAs/AlAsSb single quantum wells, we expect a fast carrier redistribution with in the broad inhomogeneous intersubband absorption spectrum from a wavelength as short as 1.72 mum. In addition, due to large resonant 3(rd) order susceptibility but weak absorption, we expect small saturation intensity (I-S) at this short wavelength. We present wavelength dependent saturation measurements to show that the I-S is, indeed, lower by more than an order of magnitude compared to that at the main peak (1.88 mum). We also show from the figure of merit estimates that the carrier relaxation time at 1.72 mum is expected to be faster at 1.72 mum, consistent with the line shape analysis predictions.

引用

页码：90 / 98

页数：9

共 20 条

[1] Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells [J].

Akiyama, T ;

Georgiev, N ;

Mozume, T ;

Yoshida, H ;

Gopal, AV ;

Wada, O .

ELECTRONICS LETTERS, 2001, 37 (02) :129-130

[2] Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells [J].

Asano, T ;

Noda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11) :6020-6024

[3] All-optical switching in long-period fiber gratings [J].

Eggleton, BJ ;

Slusher, RE ;

Judkins, JB ;

Stark, JB ;

Vengsarkar, AM .

OPTICS LETTERS, 1997, 22 (12) :883-885

[4] Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice [J].

Georgiev, N ;

Mozume, T .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2371-2373

[5] Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm [J].

Gmachl, C ;

Ng, HM ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :334-336

[6] Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells [J].

Gopal, AV ;

Kumar, R ;

Vengurlekar, AS ;

Bosacchi, A ;

Franchi, S ;

Pfeiffer, LN .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1858-1862

[7] Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis [J].

Gopal, AV ;

Yoshida, H ;

Neogi, A ;

Mozume, T ;

Georgiev, N ;

Wada, O ;

Ishikawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10A) :L1015-L1018

[8] FEASIBILITY OF 1.55 MU-M INTERSUBBAND PHOTONIC DEVICES USING INGAAS/ALAS PSEUDOMORPHIC QUANTUM-WELL STRUCTURES [J].

HIRAYAMA, Y ;

SMET, JH ;

PENG, LH ;

FONSTAD, CG ;

IPPEN, EP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :890-895

[9] ULTRAFAST ALL-OPTICAL GATE WITH SUBPICOSECOND ON AND OFF RESPONSE-TIME [J].

HULIN, D ;

MYSYROWICZ, A ;

ANTONETTI, A ;

MIGUS, A ;

MASSELINK, WT ;

MORKOC, H ;

GIBBS, HM ;

PEYGHAMBARIAN, N .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :749-751

[10]

IIZUKA N, 2000, 7 INT WORKSH FEMT TE, P93

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