Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice

The effect of growth interruption times combined with selective group-V species exposure of InGaAs/AlAsSb short-period superlattice structure was investigated with photoluminescence, x-ray diffraction, and reflection high-energy electron diffraction. Reflection electron diffraction shows surface reconstruction transitions dependent on the time and species type exposure procedure. A shift in the photoluminescence peak position is observed from samples grown under different species type exposure compared to the samples grown without interruption, Sb termination being at a lower energy and As termination at higher energy, respectively. This is interpreted in terms of increased mixing of Sb in the interface InGaAs layers. (C) 1999 American Institute of Physics. [S0003-6951(99)01042-6].