Molecular beam epitaxial growth of bulk AlAs0.16Sb0.84 and AlAs0.16Sb0.84/InAs superlattices on lattice-matched InAs substrates

被引:11
作者
Nemeth, S
Grietens, B
Bender, H
Borghs, G
机构
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] Slovak Univ Technol Bratislava, FEI, Dept Microelect, SK-81219 Bratislava, Slovakia
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6A期
关键词
superlattices; AlAsSb; MBE; RHEED;
D O I
10.1143/JJAP.36.3426
中图分类号
O59 [应用物理学];
学科分类号
摘要
AlAS(0.16)Sb(0.84) ternaries and AlAs0.16Sb0.84/InAs superlattices have been grown by molecular beam epitaxy lattice-matched on InAs substrates. The compositional dependence of AlAsySb1-y on the ratio of Sb-4 to As-2 fluxes as well as on the substrate temperature has been investigated and can be explained qualitatively. The growth of AlAs0.16Sb0.84/InAs superlattices is described and illustrated by the results of reflection high-energy electron diffraction measurements. The crystalline quality of the superlattices is demonstrated by means of transmission electron microscopy and X-ray diffraction measurements.
引用
收藏
页码:3426 / 3428
页数:3
相关论文
共 11 条
[2]   INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS EMITTING AT 3.9 MU-M [J].
CHOI, HK ;
TURNER, GW .
APPLIED PHYSICS LETTERS, 1995, 67 (03) :332-334
[3]   Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices [J].
Chow, DH ;
Miles, RH ;
Hasenberg, TC ;
Kost, AR ;
Zhang, YH ;
Dunlap, HL ;
West, L .
APPLIED PHYSICS LETTERS, 1995, 67 (25) :3700-3702
[4]   GROWTH AND OPTICAL CHARACTERIZATION OF INAS1-XSBX(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS AND ON GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY [J].
DOBBELAERE, W ;
DEBOECK, J ;
BORGHS, G .
APPLIED PHYSICS LETTERS, 1989, 55 (18) :1856-1858
[5]   VERTICAL TRANSITION QUANTUM CASCADE LASER WITH BRAGG CONFINED EXCITED-STATE [J].
FAIST, J ;
CAPASSO, F ;
SIRTORI, C ;
SIVCO, DL ;
HUTCHINSON, AL ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1995, 66 (05) :538-540
[6]   COMPOSITIONAL DEPENDENCE OF ALASYSB1-Y TERNARIES ON THE RATIO OF SB/AS FLUXES AND ON THE SUBSTRATE-TEMPERATURE [J].
NEMETH, S ;
GRIETENS, B ;
BORGHS, G .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3552-3553
[7]   MIDINFRARED LEAD SALT MULTI-QUANTUM-WELL DIODE-LASERS WITH 282 K OPERATION [J].
SHI, Z ;
TACKE, M ;
LAMBRECHT, A ;
BOTTNER, H .
APPLIED PHYSICS LETTERS, 1995, 66 (19) :2537-2539
[8]  
VVEDENSKY DD, 1994, MRS FALL M, P155
[9]  
WEAST RC, 1984, HDB CHEM PHYSICS, pF171
[10]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF INAS1-XSBX IN 8-12 MU-M WAVELENGTH RANGE [J].
YEN, MY ;
LEVINE, BF ;
BETHEA, CG ;
CHOI, KK ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :927-929