COMPOSITIONAL DEPENDENCE OF ALASYSB1-Y TERNARIES ON THE RATIO OF SB/AS FLUXES AND ON THE SUBSTRATE-TEMPERATURE

被引:16
作者
NEMETH, S [1 ]
GRIETENS, B [1 ]
BORGHS, G [1 ]
机构
[1] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT MICROELECTR, BRATISLAVA 81219, SLOVAKIA
关键词
D O I
10.1063/1.358586
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a systematic study of the compositional dependence of AlAs ySb1-y layers, grown by molecular beam epitaxy, on the ratio of As to Sb fluxes and on the substrate temperature. The initial results clearly demonstrate that variations in the composition can be observed by changing the above-mentioned parameters. The emphasis of this communication is on understanding the qualitative trends of these dependencies. © 1995 American Institute of Physics.
引用
收藏
页码:3552 / 3553
页数:2
相关论文
共 9 条
[2]   LOW-THRESHOLD LONG-WAVE LASERS (LAMBDA = 3.0-3.6 MU-M) BASED ON III-V ALLOYS [J].
AYDARALIEV, M ;
ZOTOVA, NV ;
KARANDASHOV, SA ;
MATVEEV, BA ;
STUS, NM ;
TALALAKIN, GN .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) :1575-1580
[3]   2.7-3.9 MU-M INASSB(P) INASSBP LOW-THRESHOLD DIODE-LASERS [J].
BARANOV, AN ;
IMENKOV, AN ;
SHERSTNEV, VV ;
YAKOVLEV, YP .
APPLIED PHYSICS LETTERS, 1994, 64 (19) :2480-2482
[4]   GROWTH AND OPTICAL CHARACTERIZATION OF INAS1-XSBX(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS AND ON GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY [J].
DOBBELAERE, W ;
DEBOECK, J ;
BORGHS, G .
APPLIED PHYSICS LETTERS, 1989, 55 (18) :1856-1858
[5]   INASSB/ALASSB DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 4 MU-M [J].
EGLASH, SJ ;
CHOI, HK .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :833-835
[6]   MBE GROWTH OF GAINASSB/ALGAASSB DOUBLE HETEROSTRUCTURES FOR INFRARED DIODE-LASERS [J].
EGLASH, SJ ;
CHOI, HK ;
TURNER, GW .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :669-676
[7]  
Eliseev P. G., 1991, Optoelectronics - Devices and Technologies, V6, P1
[8]   LOW-THRESHOLD CONTINUOUS OPERATION OF INGAAS/INGAASP QUANTUM-WELL LASERS AT SIMILAR-TO-2.0-MU-M [J].
FOROUHAR, S ;
KEO, S ;
LARSSON, A ;
KSENDZOV, A ;
TEMKIN, H .
ELECTRONICS LETTERS, 1993, 29 (07) :574-576
[9]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF INAS1-XSBX IN 8-12 MU-M WAVELENGTH RANGE [J].
YEN, MY ;
LEVINE, BF ;
BETHEA, CG ;
CHOI, KK ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :927-929