2.7-3.9 MU-M INASSB(P) INASSBP LOW-THRESHOLD DIODE-LASERS

被引：52

作者：

BARANOV, AN ^{[1
]}

IMENKOV, AN ^{[1
]}

SHERSTNEV, VV ^{[1
]}

YAKOVLEV, YP ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,194021 ST PETERSBURG,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

Band absorption - Blue shift - Carrier density - Double heterostructure diode lasers - Lasing - Liquid phase epitaxy - Threshold current;

D O I：

10.1063/1.111603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasing has been obtained in the wavelength range 2.7-3.9 mum in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180 K. The blue shift of lasing modes was observed with current. This was explained by the increase of the carrier density in the active region above threshold due to intervalence band absorption.

引用

页码：2480 / 2482

页数：3

共 12 条

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