3.06 MU-M INGAASSB/INPSB DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：45

作者：

MENNA, RJ

CAPEWELL, DR

MARTINELLI, RU

YORK, PK

ENSTROM, RE

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed laser action at lambda = 3.06-mu-m in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3 double heterojunction, diode lasers, which were grown by organometallic vapor-phase epitaxy. The maximum operating temperature was T = 35 K, and typical threshold current densities were 200-330 A/cm2. At temperatures up to 35 K, the lasing wavelength decreased with increasing temperature owing to a band-filling effect.

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页码：2127 / 2129

页数：3

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