MASS-SPECTROMETRIC DETERMINATION OF ANTIMONY INCORPORATION DURING III-V MOLECULAR-BEAM EPITAXY

被引：34

作者：

EVANS, KR

STUTZ, CE

YU, PW

WIE, CR

机构：

[1] USAF,WRIGHT AERONAUT LABS,WRIGHT RES & DEV CTR,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433

[2] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435

[3] UNIV BUFFALO,BUFFALO,NY 14260

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：271 / 275

页数：5

共 15 条

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[5] EFFECTS OF STRAIN AND SURFACE RECONSTRUCTION ON THE KINETICS OF INDIUM INCORPORATION IN MBE GROWTH OF INAS
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[6] INCORPORATION OF SB IN GAAS1-XSBX (X-LESS-THAN-0.15) BY MOLECULAR-BEAM EPITAXY
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[8] AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
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[9] Springthorpe A. J., 1988, J VAC SCI TECHNOL B, V6, P754, DOI 10.1116/1.584366
[10] ONLINE DETERMINATION OF ALLOY COMPOSITION DURING TERNARY III/V MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1989, 55 (08) : 777 - 779

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