EFFECTS OF STRAIN AND SURFACE RECONSTRUCTION ON THE KINETICS OF INDIUM INCORPORATION IN MBE GROWTH OF INAS

被引:19
作者
EVANS, KR [1 ]
STUTZ, CE [1 ]
LORANCE, DK [1 ]
JONES, RL [1 ]
机构
[1] USAF,WRIGHT AERONAUT LABS,AADR,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1016/0022-0248(89)90381-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:197 / 200
页数:4
相关论文
共 12 条
  • [1] [Anonymous], 1973, LANGES HDB CHEM, V15
  • [2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
    ARTHUR, JR
    [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
  • [3] THERMAL-DESORPTION SPECTROSCOPY OF XE AT THE SI(111) AS A LOCAL PROBE FOR SURFACE-STRUCTURES
    BARTHA, JW
    BARJENBRUCH, U
    HENZLER, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1588 - 1591
  • [5] DUDLEY S, COMMUNICATION
  • [6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE
    FOXON, CT
    JOYCE, BA
    [J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450
  • [7] LAYER-BY-LAYER SUBLIMATION OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION IN A MOLECULAR-BEAM EPITAXY SYSTEM
    KOJIMA, T
    KAWAI, NJ
    NAKAGAWA, T
    OHTA, K
    SAKAMOTO, T
    KAWASHIMA, M
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 286 - 288
  • [8] STRUCTURE AND REACTIVITY OF GAAS-SURFACES
    RANKE, W
    JACOBI, K
    [J]. PROGRESS IN SURFACE SCIENCE, 1980, 10 (01) : 1 - 52
  • [9] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION
    SCHAFFER, WJ
    LIND, MD
    KOWALCZYK, SP
    GRANT, RW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 688 - 695
  • [10] SUMMARY ABSTRACT - THEORETICAL-STUDIES OF ALLOY CLUSTERING AND INTERFACE ROUGHNESS IN INAS, GAAS, AND ALAS BASED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    SINGH, J
    DAVIES, B
    DUDLEY, S
    BAJAJ, KK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 558 - 559