NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION

被引：141

作者：

SCHAFFER, WJ ^{[1
]}

LIND, MD ^{[1
]}

KOWALCZYK, SP ^{[1
]}

GRANT, RW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：688 / 695

页数：8

共 24 条

[1] THERMAL EXPANSION AND RELATED BONDING PROBLEMS OF SOME III-V COMPOUND SEMICONDUCTORS
BERNSTEIN, L
BEALS, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 122 - &
[2] PRECISION LATTICE CONSTANT DETERMINATION
BOND, WL
[J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (10): : 814 - 818
[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
CHANG, CA
SERRANO, CM
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540
[4] CHANG CA, 1979, J VAC SCI TECHNOL, V17, P603
[5] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
FOXON, CT
JOYCE, BA
NORRIS, MT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[6] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
[7] RELATIONSHIP OF MBE GROWTH-PARAMETERS WITH THE ELECTRICAL-PROPERTIES OF THIN (100) INAS EPILAYERS
GRANGE, JD
PARKER, EHC
KING, RM
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (09) : 1601 - &
[8] ELEMENTARY THEORY OF HETEROJUNCTIONS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[9] ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 684 - 691
[10] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS)
KOWALCZYK, SP
SCHAFFER, WJ
KRAUT, EA
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708

← 1 2 3 →