INCORPORATION OF SB IN GAAS1-XSBX (X-LESS-THAN-0.15) BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

KLEM, J

FISCHER, R

DRUMMOND, TJ

MORKOC, H

CHO, AY

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 12期

关键词：

D O I：

10.1049/el:19830310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：453 / 455

页数：3

共 11 条

[1] DEVICE CHARACTERISTICS OF (AL,GA)AS LASERS WITH GA(AS,SB) ACTIVE LAYERS
ANTHONY, PJ
ZILKO, JL
PAWLIK, JR
SWAMINATHAN, V
HARTMAN, RL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) : 1094 - 1100
[2] RELIABILITY OF 0.87 MU-M (AL,GA)AS DOUBLE HETEROSTRUCTURE LASERS WITH GA(AS,SB) ACTIVE LAYERS
ANTHONY, PJ
ZILKO, JL
HARTMAN, RL
SCHUMAKER, NE
SWAMINATHAN, V
WAGNER, WR
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (02): : 50 - 52
[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[4] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[5] COLLINS DM, UNPUB J VACUUM SCI T
[6] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[7] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
HWANG, JCM
TEMKIN, H
BRENNAN, TM
FRAHM, RE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
[8] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX
NAHORY, RE
POLLACK, MA
DEWINTER, JC
WILLIAMS, KM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1607 - 1614
[9] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY
SAKAKI, H
CHANG, LL
LUDEKE, R
CHANG, CA
SAIHALASZ, GA
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 211 - 213
[10] RELIABILITY OF A PRACTICAL GA1-XALXAS LASER DEVICE
THOMPSON, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (01) : 11 - 13

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