Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

被引：69

作者：

Akiyama, T ^{[1
]}

Georgiev, N ^{[1
]}

Mozume, T ^{[1
]}

Yoshida, H ^{[1
]}

Gopal, AV ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 02期

关键词：

D O I：

10.1049/el:20010087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Values for the nonlinearity and recovery time of 1.55 mum intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (chi ((3))) has been evaluated to be 5.8x10-(17)m(2)/V-2. An ultrafast recovery time (tau) of similar to 685fs has been obtained while keeping the figure of merit (chi ((3))/alpha tau) as large as those of interband transitions.

引用

页码：129 / 130

页数：2

共 8 条

[1] Pump and probe measurement of intersubband relaxation time in short-wavelength intersubband transition [J].

Asano, T ;

Noda, S ;

Tomoda, K .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1418-1420

[2] Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate [J].

Asano, T ;

Noda, S ;

Abe, T ;

Sasaki, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1285-1291

[3] Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells [J].

Asano, T ;

Noda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11) :6020-6024

[4] Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm [J].

Gmachl, C ;

Ng, HM ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :334-336

[5] Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells [J].

Iizuka, N ;

Kaneko, K ;

Suzuki, N ;

Asano, T ;

Noda, S ;

Wada, O .

APPLIED PHYSICS LETTERS, 2000, 77 (05) :648-650

[6] 1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy [J].

Mozume, T ;

Yoshida, H ;

Neogi, A ;

Kudo, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B) :1286-1289

[7]

Yoshid H., 2000, Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), P357, DOI 10.1109/CLEO.2000.907113

[8] Ultrafast all-optical switching at 1.3μm/1.55μm using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions [J].

Yoshida, H ;

Mozume, T ;

Neogi, A ;

Wada, O .

ELECTRONICS LETTERS, 1999, 35 (13) :1103-1105

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