Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells

被引：193

作者：

Iizuka, N

Kaneko, K

Suzuki, N

Asano, T

Noda, S

Wada, O

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[3] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ultrafast intersubband relaxation in GaN quantum wells has been verified. Al0.65Ga0.35N/GaN multiple quantum wells, with as many as 200 wells, were grown by optimizing the barrier thickness and introducing GaN intermediate layers. The intersubband absorption is sufficiently strong for the relaxation time to be measured. A pump-probe measurement is performed to investigate the relaxation. An ultrashort relaxation time of less than 150 fs is obtained at a wavelength of it 5 mu m. The transient time is shorter than that of InGaAs quantum wells by approximately an order of magnitude. This result is promising for realizing ultrafast optical switches. (C) 2000 American Institute of Physics. [S0003-6951(00)02531-6].

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页码：648 / 650

页数：3

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