Short-wavelength (λ<2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells

被引:16
作者
Akimoto, R [1 ]
Akita, K [1 ]
Sasaki, F [1 ]
Kobayashi, S [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1063/1.1468261
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on linear and nonlinear short-wavelength (lambda<2 μm) intersubband (ISB) absorption characteristics in ZnSe/BeTe quantum wells by means of an interband pump and ISB pump/probe technique. The ISB absorption saturates with a hole burning effect, indicating the absorption band is broadened inhomogeneously. The saturation intensity is as low as 4.3 MW/cm(2) at λ=1.76 μm. The direct ISB energy relaxation time increases gradually from 0.20 to 0.38 ps with decreasing λ from 2.2 to 1.8 μm, while the saturation recovery is replaced by another slow relaxation process with a time constant of a few ps. The Γ(ZnSe)-X(BeTe) electron transfer is a relevant mechanism for this slow relaxation. (C) 2002 American Institute of Physics.
引用
收藏
页码:2433 / 2435
页数:3
相关论文
共 13 条
[1]   Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices [J].
Akimoto, R ;
Kinpara, Y ;
Akita, K ;
Sasaki, F ;
Kobayashi, S .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :580-582
[2]   Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells [J].
Akiyama, T ;
Georgiev, N ;
Mozume, T ;
Yoshida, H ;
Gopal, AV ;
Wada, O .
ELECTRONICS LETTERS, 2001, 37 (02) :129-130
[3]   Pump and probe measurement of intersubband relaxation time in short-wavelength intersubband transition [J].
Asano, T ;
Noda, S ;
Tomoda, K .
APPLIED PHYSICS LETTERS, 1999, 74 (10) :1418-1420
[4]   Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy [J].
Ghislotti, G ;
Riedo, E ;
Ielmini, D ;
Martinelli, M .
APPLIED PHYSICS LETTERS, 1999, 75 (23) :3626-3628
[5]   Sub-picosecond electron scattering time for λ ≃ 1.55μm intersubband transitions in GaN/AlGaN multiple quantum wells [J].
Gmachl, C ;
Frolov, SV ;
Ng, HM ;
Chu, SNG ;
Cho, AY .
ELECTRONICS LETTERS, 2001, 37 (06) :378-380
[6]   Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well [J].
Gopal, AV ;
Yoshida, H ;
Neogi, A ;
Mozume, T ;
Georgiev, N ;
Simoyama, T ;
Wada, O ;
Ishikawa, H .
ELECTRONICS LETTERS, 2001, 37 (20) :1265-1267
[7]   Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells [J].
Iizuka, N ;
Kaneko, K ;
Suzuki, N ;
Asano, T ;
Noda, S ;
Wada, O .
APPLIED PHYSICS LETTERS, 2000, 77 (05) :648-650
[8]   Intersubband absorption dynamics in coupled quantum wells [J].
Müller, T ;
Bratschitsch, R ;
Strasser, G ;
Unterrainer, K .
APPLIED PHYSICS LETTERS, 2001, 79 (17) :2755-2757
[9]   Band structure of BeTe: A combined experimental and theoretical study [J].
Nagelstrasser, M ;
Droge, H ;
Steinruck, HP ;
Fischer, F ;
Litz, T ;
Waag, A ;
Landwehr, G ;
Fleszar, A ;
Hanke, W .
PHYSICAL REVIEW B, 1998, 58 (16) :10394-10400
[10]   ELECTRON-SCATTERING BY CONFINED LO POLAR PHONONS IN A QUANTUM WELL [J].
RIDLEY, BK .
PHYSICAL REVIEW B, 1989, 39 (08) :5282-5286