Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy

被引：11

作者：

Ghislotti, G ^{[1
]}

Riedo, E ^{[1
]}

Ielmini, D ^{[1
]}

Martinelli, M ^{[1
]}

机构：

[1] CoreCom, I-20131 Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intersubband relaxation time for InxGa1-xAs/AlAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Gamma-X coupling on intersubband decay is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01749-0].

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收藏

页码：3626 / 3628

页数：3

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