DETERMINATION OF THE INTERSUBBAND LIFETIME IN SI/SIGE QUANTUM-WELLS

被引：16

作者：

HEISS, W

GORNIK, E

HERTLE, H

MURDIN, B

KNIPPELS, GMH

LANGERAK, CJGM

SCHAFFLER, F

PIDGEON, CR

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

[2] FOM,INST PLASMAFYS,3439 MN NIEUWEGEIN,NETHERLANDS

[3] DAIMLER BENZ AG,FORSCHUNGSINST ULM,W-7900 ULM,GERMANY

[4] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 24期

关键词：

D O I：

10.1063/1.113741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

引用

收藏

页码：3313 / 3315

页数：3

相关论文

共 15 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2]

BASLEV J, 1996, PHYS REV, V143, P636

[3]

BOCKELMANN U, 1990, PHYS REV B, V41, P7867

[4] MEASUREMENT OF THE INTERSUBBAND SCATTERING RATE IN SEMICONDUCTOR QUANTUM-WELLS BY EXCITED-STATE DIFFERENTIAL ABSORPTION-SPECTROSCOPY [J].

FAIST, J ;

CAPASSO, F ;

SIRTORI, C ;

SIVCO, DL ;

HUTCHINSON, AL ;

CHU, SNG ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1354-1356

[5] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[6] COMPLETE BLEACHING OF THE INTERSUBBAND ABSORPTION IN GAAS/ALGAAS QUANTUM-WELLS USING A FAR-INFRARED FREE-ELECTRON LASER [J].

HELM, M ;

FROMHERZ, T ;

MURDIN, BN ;

PIDGEON, CR ;

GEERINCK, KK ;

HOVENYER, NJ ;

WENCKEBACH, WT ;

VANDERMEER, AFG ;

VANAMERSFOORT, PW .

APPLIED PHYSICS LETTERS, 1993, 63 (24) :3315-3317

[7] INTERSUBBAND ABSORPTION IN THE CONDUCTION-BAND OF SI/SI1-XGEX MULTIPLE QUANTUM-WELLS [J].

HERTLE, H ;

SCHUBERTH, G ;

GORNIK, E ;

ABSTREITER, G ;

SCHAFFLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2977-2979

[8] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[9] AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS [J].

KASPER, E ;

KIBBEL, H ;

SCHAFFLER, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1154-1158

[10]

KRAIG K, 1994, SEMICOND SCI TECH, V7, P627