INTERSUBBAND ABSORPTION IN THE CONDUCTION-BAND OF SI/SI1-XGEX MULTIPLE QUANTUM-WELLS

被引：36

作者：

HERTLE, H ^{[1
]}

SCHUBERTH, G ^{[1
]}

GORNIK, E ^{[1
]}

ABSTREITER, G ^{[1
]}

SCHAFFLER, F ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSINST ULM,W-7000 STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intersubband absorption of electrons in modulation doped Si/Si1-xGex multiple quantum wells has been observed. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. The measured transition energies are in good agreement with self consistent subband calculations.

引用

页码：2977 / 2979

页数：3

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