EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES

被引:124
作者
FELDMANN, J
NUNNENKAMP, J
PETER, G
GOBEL, E
KUHL, J
PLOOG, K
DAWSON, P
FOXON, CT
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 09期
关键词
D O I
10.1103/PhysRevB.42.5809
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A detailed experimental study of the real-space -X transfer in type-II GaAs/AlAs short-period superlattices and in type-II AlxGa1-xAs/AlAs multiple-quantum-well structures is presented. Transfer times on a subpicosecond and picosecond time scale are observed. The time constants critically depend on the thickness of the (Al,Ga)As layers, but not on the AlAs-layer thickness in the samples studied. The -X transfer rate is determined by the spatial overlap of the and X wave functions confined in the different layers. Intensity- and temperature-dependent measurements provide insight into the scattering mechanism. We conclude that electron LO-phonon scattering is the dominant scattering process for samples with thick (Al,Ga)As layers (>100). In contrast, interface scattering due to the interface mixing potential (-Xz mixing) and/or due to potential fluctuations caused by interface roughness (-Xx,y mixing) probably dominates for samples with thin (Al,Ga)As layers (<35). © 1990 The American Physical Society.
引用
收藏
页码:5809 / 5821
页数:13
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