SPLITTING OF THE STATES DERIVED FROM THE BULK X MINIMA IN GAAS-ALAS SUPERLATTICES

被引：13

作者：

BROWN, LDL ^{[1
]}

JAROS, M ^{[1
]}

WOLFORD, DJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6413 / 6416

页数：4

共 10 条

[1] PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES
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[2] Drummond T. J., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V796, P2, DOI 10.1117/12.940988
[3] X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES
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[4] EFFECTS OF ALLOYING AND HYDROSTATIC-PRESSURE ON ELECTRONIC AND OPTICAL-PROPERTIES OF GAAS-ALXGA1-XAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES
GELL, MA
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WOLFORD, DJ
KEUCH, TF
BRADLEY, JA
[J]. PHYSICAL REVIEW B, 1987, 35 (03) : 1196 - 1222
[5] EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1068 - 1070
[6] SHORT-PERIOD GAAS-ALAS SUPERLATTICES - OPTICAL-PROPERTIES AND ELECTRONIC-STRUCTURE
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FOXON, CT
[J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5535 - 5542
[7] ORIGIN OF THE BAND-EDGE STATES IN [001] THIN SUPERLATTICES OF GAAS/ALAS
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BATRA, IP
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1595 - 1597
[8] ELECTRONIC-STRUCTURE AND OPTICAL-TRANSITIONS IN GAAS-GA1-XALXAS(001) SUPERLATTICES
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GELL, MA
JAROS, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (20): : 3845 - 3853
[9] GAMMA-X MIXING IN GAAS ALXGA1-XAS AND ALXGA1-XAS ALAS SUPERLATTICES
TING, DZY
CHANG, YC
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4359 - 4374
[10] PRESSURE-DEPENDENCE OF GAAS/ALXGA1-XAS QUANTUM-WELL BOUND-STATES - THE DETERMINATION OF VALENCE-BAND OFFSETS
WOLFORD, DJ
KUECH, TF
BRADLEY, JA
GELL, MA
NINNO, D
JAROS, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1043 - 1050

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