ORIGIN OF THE BAND-EDGE STATES IN [001] THIN SUPERLATTICES OF GAAS/ALAS

被引：16

作者：

NELSON, JS ^{[1
]}

FONG, CY ^{[1
]}

BATRA, IP ^{[1
]}

机构：

[1] IBM CORP, ALMADEN RES CTR, SAN JOSE, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 22期

关键词：

D O I：

10.1063/1.97791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1595 / 1597

页数：3

共 16 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
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SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
[2] ELECTRONIC STATES OF IDEAL GE-AL INTERFACES
BATRA, IP
HERMAN, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 1080 - 1084
[3] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[4] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS
DAWSON, P
WILSON, BA
TU, CW
MILLER, RC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 541 - 543
[5] X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES
FINKMAN, E
STURGE, MD
TAMARGO, MC
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1299 - 1301
[6] ZONE FOLDING, MORPHOGENESIS OF CHARGE-DENSITIES, AND THE ROLE OF PERIODICITY IN GAAS-ALXGA1-XAS (001) SUPERLATTICES
GELL, MA
NINNO, D
JAROS, M
HERBERT, DC
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2416 - 2427
[7] INHOMOGENEOUS ELECTRON-GAS
RAJAGOPAL, AK
CALLAWAY, J
[J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
[8] MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS
IHM, J
ZUNGER, A
COHEN, ML
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21): : 4409 - 4422
[9] EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES
IHM, J
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1068 - 1070
[10] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIBASHI, A
MORI, Y
ITABASHI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2691 - 2695

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