ELECTRONIC STATES OF IDEAL GE-AL INTERFACES

被引：17

作者：

BATRA, IP

HERMAN, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572050

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1080 / 1084

页数：5

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