Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

被引：10

作者：

Gopal, AV

Yoshida, H

Neogi, A

Mozume, T

Georgiev, N

Simoyama, T

Wada, O

Ishikawa, H

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

[2] New Energy & Ind Res Dev Org, Tokyo 170, Japan

[3] Duke Univ, Dept Phys, Durham, NC 27708 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 20期

关键词：

Band structure - Electromagnetic wave absorption - Photons - Semiconducting indium gallium arsenide - Semiconductor doping - Spectrum analysis;

D O I：

10.1049/el:20010844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wavelength dependence of the intersubband absorption saturation in InGaAs/AlAsSb quantum wells is presented. Large intersubband nonlinearity at 1.72 mum with the estimated saturation intensity as low as 4 MW/cm(2) was observed.

引用

页码：1265 / 1267

页数：3

共 5 条

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GOPAL AV, 2001, P IPRM 01 NAR JAP, P113

[5] Ultrafast all-optical switching at 1.3μm/1.55μm using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions [J].

Yoshida, H ;

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Wada, O .

ELECTRONICS LETTERS, 1999, 35 (13) :1103-1105

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