Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

被引：16

作者：

Gopal, AV ^{[1
]}

Yoshida, H ^{[1
]}

Simoyama, T ^{[1
]}

Georgiev, N ^{[1
]}

Mozume, T ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 25期

关键词：

D O I：

10.1063/1.1489479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report 1.35 mum intersubband absorption, in InGaAs/AlAsSb multiquantum wells, obtained by introducing a one monolayer AlAs layer at the well-barrier interface. The observed peak covers the useful communication wavelength range of 1.2-1.6 mum. Polarization-resolved, room-temperature absorption spectra and 77 K photoluminescence spectra measured on a series of samples reveal this short wavelength intersubband absorption peak (approximate to1.35 mum) in 7 and 9 monolayer wells that are doped in the well region to a density less than or equal to2x10(18) cm(-3). For heavier doping and in narrower wells, we do not observe this transition. (C) 2002 American Institute of Physics.

引用

页码：4696 / 4698

页数：3

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