High-performance low-temperature poly-silicon thin film transistors fabricated by new metal-induced lateral crystallization process

被引：26

作者：

Kim, TK ^{[1
]}

Ihn, TH ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Coll Engn, Div Engn & Mat Sci, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期

关键词：

metal-induced lateral crystallization; poly-Si TFTs; field-effect electron mobility; leakage current;

D O I：

10.1143/JJAP.37.4244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effect of crystalline defects in metal-induced lateral crystallization (MILC) thin film transistors (TFTs) was studied and a new MILC method was proposed to improve the electrical properties of poly-Si TFTs. Defects at channel, which were formed by Ni in conventional MILC method, could be successfully removed by means of asymmetric Ni-deposition. Since the crystalline defects were removed at the channel, held-effect electron mobility increased by a large value up to 120 cm(2)/Vs, while the leakage current was reduced. Electrical properties of the TFTs fabricated by the new MILC method were dependent on which side of the channel was deposited with Ni.

引用

页码：4244 / 4247

页数：4

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