High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

被引：18

作者：

Sullivan, GJ

Higgins, JA

Chen, MY

Yang, JW

Chen, Q

Pierson, RL

McDermott, BT

机构：

[1] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA

[2] APA Opt, Blaine, MN 55449 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 09期

关键词：

D O I：

10.1049/el:19980601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an f(max) = 42GHz, and an f(1) = 15GHz. At 10GHz, 320 mu n wide transistors had a total power of 900mW with a gain of 6.5dB, which corresponds to a power density of 2.8W/mm.

引用

页码：922 / 924

页数：3

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