KSb5S8:: A wide bandgap phase-change material for ultra high density rewritable information storage

被引：51

作者：

Kyratsi, T

Chrissafis, K

Wachter, J

Paraskevopoulos, KM

Kanatzidis, MG ^{[1
]}

机构：

[1] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA

[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 17期

关键词：

D O I：

10.1002/adma.200304994

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The reversible glassformation and glass crystallization properties of KSb3S8 was described. On the basis of glass transition and crystallization kinetics of KSb5S8, it was found that the crystallization rate and assoicated activation energies were comparable or superior to those of Ge2Sb2Te5 but having the additional advantage of possessing a much higher optimal bandgap suggesting possible utility in high density optical data storage applications using short wavelength laser beams.

引用

页码：1428 / 1431

页数：4

共 18 条

[1]

Balan V, 2001, J OPTOELECTRON ADV M, V3, P367

[2] The crystal structures of synthetic KSb5S8 and (Tl0.598, K0.402)Sb5S8 and their relation to parapierrotite (TlSb5S8) [J].