Characterization of H defects in the aluminium-hydrogen system using small-angle scattering techniques

被引:40
作者
Buckley, CE
Birnbaum, HK
Lin, JS
Spooner, S
Bellmann, D
Staron, P
Udovic, TJ
Hollar, E
机构
[1] Curtin Univ Technol, Dept Appl Phys, Perth, WA 6845, Australia
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN USA
[4] GKSS Res Ctr Geesthacht GmbH, Inst Mat Res, D-21502 Geesthacht, Germany
[5] Natl Inst Stand & Technol, Ctr Neutron Res, Gaithersburg, MD 20899 USA
关键词
D O I
10.1107/S0021889800018239
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Aluminium foils (99.99% purity) and single crystals (99.999% purity) were charged with hydrogen using a gas plasma method and electrochemical methods, resulting in the introduction of a large amount of hydrogen. X-ray diffraction measurements indicated that within experimental error there was a zero change in lattice parameter after plasma charging. This result is contradictory to almost all other face-centred cubic (f.c.c.) materials, which exhibit a lattice expansion when the hydrogen enters the lattice interstitially. It is hypothesized that the hydrogen does not enter the lattice as an interstitial solute, but instead forms an H-vacancy complex at the surface that diffuses into the volume and then clusters to form H-2 bubbles. Small- and ultra-small-angle neutron scattering (SANS, USANS) and small-angle X-ray scattering (SAXS) were primarily employed to study the nature and agglomeration of the H-vacancy complexes in the Al-H system. The SAXS results were ambiguous owing to double Bragg scattering, but the SANS and USANS investigation, coupled with results from inelastic neutron scattering, and transmission and scanning electron microscopy, revealed the existence of a large size distribution of hydrogen bubbles on the surface and in the bulk of the Al-H system. The relative change in lattice parameter is calculated from the pressure in a bubble of average volume and is compared with the experimentally determined value.
引用
收藏
页码:119 / 129
页数:11
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