A study of ultra shallow junction and tilted channel implantation for high performance 0.1μm pMOSFETs

被引:16
作者
Goto, K [1 ]
Kase, M [1 ]
Momiyama, K [1 ]
Kurata, H [1 ]
Tanaka, T [1 ]
Deura, M [1 ]
Sanbonsugi, Y [1 ]
Sugii, T [1 ]
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年
关键词
D O I
10.1109/IEDM.1998.746437
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impact of ultra-shallow junction and tilted channel implantation (TCI) is discussed with respect to source/drain resistance (R-sd), and short-channel effect (SCE) based on physical gate length (L-gate) and effective gate length (L-eff). We obtained the following results: (1) A shallower junction but not with improves the SCE immunity for a given L-gate, respect to L-eff. (2) The essential factor for the reduction of Rsd is not the sheet resistance (R-sheet) Of source/drain (S/D) extensions, but the junction tailing profile. (3) TCI was found to be effective for increasing the current drive ability due to the reduced L-eff for a given off current (I-off). (4) The effectiveness of TCI was confirmed by a CV L-eff extraction method. (5) Encaurage by above results, high-performance 0.1-mu m pMOSFETs were demonstrated using a 1keV, B+ or BF2+ implantation and TCI technology. The device achieved a high drive current (I-drive) of 360 mu A/mu m (@V (g)=V-d=-1.5V, I-off=1nA/mu m).
引用
收藏
页码:631 / 634
页数:4
相关论文
共 5 条
[1]  
KURATA H, 1997, SOLID STATE DEV MAT, P502
[2]  
MOMIYAMA Y, 1998, VLSI S, P267
[3]   A 0.10μm gate length CMOS technology with 30Å gate dielectric for 1.0V-1.5V applications [J].
Rodder, M ;
Hanratty, M ;
Rogers, D ;
Laaksonen, T ;
Hu, JC ;
Murtaza, S ;
Chao, CP ;
Hattangady, S ;
Aur, S ;
Amerasekera, A ;
Chen, IC .
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :223-226
[4]  
Satoh S., 1989, NASECODE VI. Proceedings of the Sixth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, P311
[5]  
TAUR Y, 1993, IEEE ELECTR DEVICE L, P267