A study of ultra shallow junction and tilted channel implantation for high performance 0.1μm pMOSFETs

被引：16

作者：

Goto, K ^{[1
]}

Kase, M ^{[1
]}

Momiyama, K ^{[1
]}

Kurata, H ^{[1
]}

Tanaka, T ^{[1
]}

Deura, M ^{[1
]}

Sanbonsugi, Y ^{[1
]}

Sugii, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of ultra-shallow junction and tilted channel implantation (TCI) is discussed with respect to source/drain resistance (R-sd), and short-channel effect (SCE) based on physical gate length (L-gate) and effective gate length (L-eff). We obtained the following results: (1) A shallower junction but not with improves the SCE immunity for a given L-gate, respect to L-eff. (2) The essential factor for the reduction of Rsd is not the sheet resistance (R-sheet) Of source/drain (S/D) extensions, but the junction tailing profile. (3) TCI was found to be effective for increasing the current drive ability due to the reduced L-eff for a given off current (I-off). (4) The effectiveness of TCI was confirmed by a CV L-eff extraction method. (5) Encaurage by above results, high-performance 0.1-mu m pMOSFETs were demonstrated using a 1keV, B+ or BF2+ implantation and TCI technology. The device achieved a high drive current (I-drive) of 360 mu A/mu m (@V (g)=V-d=-1.5V, I-off=1nA/mu m).

引用

页码：631 / 634

页数：4

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[2]

MOMIYAMA Y, 1998, VLSI S, P267

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[4]

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[5]

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