Weak adsorption of ethylene on GaAs(100)

被引：16

作者：

Chen, Y ^{[1
]}

Schmidt, J ^{[1
]}

Siller, L ^{[1
]}

Barnard, JC ^{[1
]}

Palmer, RE ^{[1
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.58.1177

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrocarbon molecules are an important source of carbon contamination in semiconductor growth processes. We have investigated the adsorption of ethylene, C2H4, on the As-terminated GaAs(100)surface at 100 K in ultrahigh vacuum with high-resolution electron-energy-loss spectroscopy. We find that the ethylene molecules are predominantly adsorbed weakly (physisorbed) on the surface with the C=C double bond parallel to the As surface dimers. This behavior differs significantly from the adsorption of C2H4 on Si(100), as predicted by recent theoretical calculation. When the surface temperature is increased from 100 to 300 K, some of the physisorbed C2H4 molecules convert to chemisorbed species. [S0163-1829(98)02127-4].

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收藏

页码：1177 / 1180

页数：4

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