Interdiffusion in InGaAs/GaAs: The effect of growth conditions

被引：15

作者：

Khreis, OM ^{[1
]}

Homewood, KP

Gillin, WP

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

[2] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.368079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of growth temperature and group-V to group-III flux ratio on the intermixing process in molecular beam epitaxial grown InxGa1-xAs/GaAs multiquantum wells were studied by means of photoluminescence coupled with repetitive thermal anneal experiments. We have shown that, for a wide range of growth conditions (growth temperatures from 565 to 636 degrees C and flux ratios from 5:1 to 25:1) the interdiffusion is controlled solely by a constant background concentration of vacancies which are probably introduced into the substrate during its manufacture. We have shown that, only growth at very low temperatures (470 degrees C) will result in appreciable excess vacancies. (C) 1998 American Institute of Physics.

引用

页码：232 / 236

页数：5

共 13 条

[1] THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES [J].

BRADLEY, IV ;

GILLIN, WP ;

HOMEWOOD, KP ;

WEBB, RP .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1686-1692

[2] A PHOTOLUMINESCENCE STUDY OF INDIUM DESORPTION FROM STRAINED GA1-XINXAS/GAAS [J].

EMENY, MT ;

HOWARD, LK ;

HOMEWOOD, KP ;

LAMBKIN, JD ;

WHITEHOUSE, CR .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :413-418

[3] INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELL STRUCTURES AS A FUNCTION OF DEPTH [J].

GILLIN, WP ;

DUNSTAN, DJ ;

HOMEWOOD, KP ;

HOWARD, LK ;

SEALY, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3782-3786

[4] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

PLANO, WE ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1372-1379

[5]

GUIDO LJ, 1988, MAT RES SOC S P I PH, V96, P353

[6] Interdiffusion: A probe of vacancy diffusion in III-V materials [J].

Khreis, OM ;

Gillin, WP ;

Homewood, KP .

PHYSICAL REVIEW B, 1997, 55 (23) :15813-15818

[7] IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING [J].

LARKINS, EC ;

BENZ, W ;

ESQUIVIAS, I ;

ROTHEMUND, W ;

BAEUMLER, M ;

WEISSER, S ;

SCHONFELDER, A ;

FLEISSNER, J ;

JANTZ, W ;

ROSENZWEIG, J ;

RALSTON, JD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (01) :16-19

[8] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].

SMITH, FW ;

CALAWA, AR ;

CHEN, CL ;

MANFRA, MJ ;

MAHONEY, LJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80

[9] LAYER INTERMIXING AND RELATED LONG-TERM INSTABILITY IN HEAVILY CARBON-DOPED ALGAAS/GAAS SUPERLATTICES [J].

SZAFRANEK, I ;

SZAFRANEK, M ;

MAJOR, JS ;

CUNNINGHAM, BT ;

GUIDO, LJ ;

HOLONYAK, N ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) :409-418

[10] KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAAS [J].

TSANG, JS ;

LEE, CP ;

LEE, SH ;

TSAI, KL ;

CHEN, HR .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4302-4306

← 1 2 →