A PHOTOLUMINESCENCE STUDY OF INDIUM DESORPTION FROM STRAINED GA1-XINXAS/GAAS

In this paper we present detailed measurements of the thermal desorption rates of indium from strained GaInAs grown off a GaAs substrate. We have made these measurements by monitoring the photoluminescence (PL) of the groundstate emission from strained quantum wells. We show that this method can be an accurate and highly sensitive technique for measuring desorption rates. The measurements have been made as a function of composition and arsenic overpressure. A simple model for the indium incorporation is developed and an activation energy for the desorption process has been obtained.