ARSENIC-INDUCED INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS

被引：62

作者：

LEWIS, BF ^{[1
]}

FERNANDEZ, R ^{[1
]}

MADHUKAR, A ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：560 / 563

页数：4

共 9 条

[1] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
HWANG, JCM
TEMKIN, H
BRENNAN, TM
FRAHM, RE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
LEWIS, BF
GRUNTHANER, FJ
MADHUKAR, A
LEE, TC
FERNANDEZ, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1317 - 1322
[3] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
[4] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184
[5] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[6] ATOMIC CORRELATIONS OF STEPPED SURFACES AND INTERFACES
PIMBLEY, JM
LU, TM
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 182 - 187
[7] DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY
VANHOVE, JM
COHEN, PI
LENT, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 546 - 550
[8] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[9] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
VASQUEZ, RP
LEWIS, BF
GRUNTHANER, FJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794

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