Electron correlation effects at Sn/Si(111)-3x3, √3x√3 and Sn/Ge(111)-3x3, √3x√3 reconstructions

被引：19

作者：

Flores, F ^{[1
]}

Ortega, J

Pérez, R

Charrier, A

Thibaudau, F

Debever, JM

Themlin, JM

机构：

[1] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[2] Univ Mediterranee, Fac Sci Luminy, CNRS, UMR 6631,Grp Phys Etats Condenses, F-13288 Marseille 9, France

来源：

PROGRESS IN SURFACE SCIENCE | 2001年 / 67卷 / 1-8期

关键词：

D O I：

10.1016/S0079-6816(01)00031-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron correlation effects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)-3 x 3, root3- x root3, Sn/Ge(1 1 1)-3 x 3 and root3 x root3 reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculations enable to define a many-body hamiltonian that includes intra- and inter-site electron interactions. From the analysis of this hamiltonian, it can be concluded that the root3 x root3 reconstructions present a Mott transition, while the 3 x 3 surface remains metallic. How these results can be used to to discriminate between conflicting models explaining the,root3- x root3 --> 3 x 3 phase transition is described. Inverse photoemission data for the Sn/Si(1 1 1) surface suggests that this phase transition can be explained by means of a dynamical fluctuations model. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：299 / 307

页数：9

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