Surface conditioning of indium-tin oxide anodes for organic light-emitting diodes

被引:84
作者
Kim, JS [1 ]
Cacialli, F [1 ]
Friend, R [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
indium-tin oxide; organic light-emitting diodes; surface treatments; oxygen-plasma;
D O I
10.1016/S0040-6090(03)01185-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Oxygen-plasma treatment of indium-tin oxide (ITO) anodes is now widely used as one of the most effective ways to improve the device performance of organic light-emitting diodes (LEDs). However, the role of oxygen-plasma treatment has not been clearly understood. We have performed detailed studies of the surface and bulk of the ITO thin films exposed to oxygen-plasma. We employed a multitude of experimental techniques, including X-ray and ultraviolet photoelectron spectroscopies, atomic force microscopy, dynamic contact angle measurement, four-point probe and Hall measurements to investigate the changes induced by the plasma. We have also analyzed the device characteristics of polymer LEDs fabricated with these anodes. We found significant modifications of the physico-chemical, morphological, transport and optical properties of the oxygen-plasma treated ITO. Although oxygen-plasma does not show any measurable etching effect, it induces considerable changes leading to an increase in work function, electron carrier concentration and conductivity. It also increases the surface energy and polarity. We relate these modifications to enhancement of the device performance, such as electroluminescence efficiency and lifetime, through their effects on hole injection, and interface structure and stability. Finally, we show that even in the presence of a hole-transport layer such as a poly(styrene sulphonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT:PSS) inserted between the anode and the emissive polymer layer, oxygen-plasma treatment of the ITO anodes is still beneficial for the devices. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:358 / 366
页数:9
相关论文
共 27 条
  • [1] [Anonymous], 1987, ELECT STRUCTURE CHEM
  • [2] Beamson G., 1992, ADV MATER, DOI DOI 10.1002/ADMA.19930051035
  • [3] Polymer light-emitting diodes; from materials to devices
    Berntsen, A
    Croonen, Y
    Cuijpers, R
    Habets, B
    Liedenbaum, C
    Schoo, H
    Visser, RJ
    Vleggaar, J
    van de Weijer, P
    [J]. ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES, 1997, 3148 : 264 - 271
  • [4] Operating stability of light-emitting polymer diodes based on poly(p-phenylene vinylene)
    Carter, JC
    Grizzi, I
    Heeks, SK
    Lacey, DJ
    Latham, SG
    May, PG
    delosPanos, OR
    Pichler, K
    Towns, CR
    Wittmann, HF
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 34 - 36
  • [5] Polymeric anodes for improved polymer light-emitting diode performance
    Carter, SA
    Angelopoulos, M
    Karg, S
    Brock, PJ
    Scott, JC
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2067 - 2069
  • [6] Chang C. Y., 1996, ULSI TECHNOLOGY, P60
  • [7] COX PA, 1987, ELECT STRUCTURE CHEM, P230
  • [8] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS
    FAN, JCC
    GOODENOUGH, JB
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3524 - 3531
  • [9] Surface treatment of indium-tin-oxide substrates and its effects on initial nucleation processes of diamine films
    Fujita, S
    Sakamoto, T
    Ueda, K
    Ohta, K
    Fujita, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A): : 350 - 353
  • [10] HARTNAGEL H., 1995, Semiconducting Transparent Thin Films