Electronic structure of self-assembled InAs quantum dots in GaAs matrix

被引：91

作者：

Brounkov, PN

Polimeni, A

Stoddart, ST

Henini, M

Eaves, L

Main, PC

Kovsh, AR

Musikhin, YG

Konnikov, SG

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[2] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage characteristics have been measured at various frequencies and temperatures for structures containing a sheet of self-assembled InAs quantum dots in both n-GaAs and p-GaAs matrices. Analysis of the capacitance-voltage characteristics shows that the deposition of 1.7 ML of InAs forms quantum dots with electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 and 170 meV above the top of the GaAs valence band. The carrier energy levels agree very well with the recombination energies obtained from photoluminescence spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)01034-1]

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页码：1092 / 1094

页数：3

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