Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes

被引：124

作者：

Kim, H ^{[1
]}

Horwitz, JS

Kushto, GP

Qadri, SB

Kafafi, ZH

Chrisey, DB

机构：

[1] George Washington Univ, Sch Engn & Appl Sci, Washington, DC 20052 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.1350595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zirconium-doped indium oxide (ZIO) thin films (similar to 2000 Angstrom thick) have been deposited by pulsed-laser deposition on glass substrates without a postdeposition anneal. The structural, electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from 25 degreesC to 400 degreesC in O-2 partial pressures ranging from 0.1 to 50 mTorr. The films (similar to 2000 Angstrom thick) deposited at 200 degreesC in 25 mTorr of oxygen show electrical resistivities as low as 2.5x10(-4) Omega cm, an average visible transmittance of 89%, and an optical band gap of 4.1 eV. The ZIO films were used as a transparent anode contact in organic light emitting diodes and the device performance was studied. The external quantum efficiency measured from these devices was about 0.9% at a current density of 100 A/m(2). (C) 2001 American Institute of Physics.

引用

页码：1050 / 1052

页数：3

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