Indium tin oxide thin films for organic light-emitting devices

被引：342

作者：

Kim, H ^{[1
]}

Piqué, A ^{[1
]}

Horwitz, JS ^{[1
]}

Mattoussi, H ^{[1
]}

Murata, H ^{[1
]}

Kafafi, ZH ^{[1
]}

Chrisey, DB ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality indium tin oxide (ITO) thin films (150-200 nm) were grown on glass substrates by pulsed laser deposition (PLD) without postdeposition annealing. The electrical, optical, and structural properties of these films were investigated as a function of substrate temperature, oxygen pressure, and film thickness. PLD provides very uniform ITO films with high transparency (greater than or equal to 85% in 400-700 nm spectrum) and low electrical resistivity (2 - 4 x 10(-4) Omega cm). The Hall mobility and carrier density for a 170-nm-thick film deposited at 300 degrees C are 29 cm(2)/V s and 1.45 x 10(21) cm(-3), respectively. Atomic force microscopy measurements of the ITO films indicated that their root-mean-square surface roughness (similar to 5 Angstrom) is superior to that (similar to 40 Angstrom) of commercially available ITO films deposited by sputtering. ITO films grown at room temperature by PLD were used to study the electroluminescence (EL) performance of organic light-emitting devices. The EL performance was comparable to that measured with commercial ITO anodes. (C) 1999 American Institute of Physics. [S0003-6951(99)00123-0].

引用

页码：3444 / 3446

页数：3

共 14 条

[1] PREPARATION OF CONDUCTING AND TRANSPARENT THIN-FILMS OF TIN-DOPED INDIUM OXIDE BY MAGNETRON SPUTTERING [J].