INDIUM TIN OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引:123
作者
MARUYAMA, T
FUKUI, K
机构
[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto, 606, Yoshida-Honmachi
关键词
D O I
10.1016/0040-6090(91)90137-M
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent conductive indium tin oxide thin films were prepared by an atmospheric pressure chemical vapour deposition method without using an oxygen donor. The raw materials were indium 2-ethylhexanoate and tin(IV) chloride, which are inexpensive and easy to handle. Polycrystalline films were obtained at a reaction temperature of 400-degrees-C. The tin content in the film is adjustable by changing the ratio of the flow rate of the carrier gas. For a 430 nm thick film deposited at 400-degrees-C, the resistivity was 2.9 x 10(-4)-OMEGA cm, and the transmittance was more than 80% in the wavenumber range above 550 nm. The effects of tin doping on the structure and characteristics of the film are discussed by comparing the results with the corresponding values for non-doped indium oxide film.
引用
收藏
页码:297 / 302
页数:6
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