INDIUM-TIN OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM METAL ACETATES

被引：34

作者：

MARUYAMA, T

TABATA, K

机构：

[1] Department of Chemical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

Chemical vapor deposition; Indium acetate; Indium-tin oxide; Thermal decomposition reaction; Thin film; Tin diacetate; Transparent conductive film;

D O I：

10.1143/JJAP.29.L355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conductive indium-tin oxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method without using an oxygen donor. The raw materials were indium acetate and tin diacetate, which are inexpensive and easy to handle. A 260-nm-thick polycrystalline film was obtained after 1 hour of deposition at a reaction temperature of 300°C. The resistivity was 6.93×1013Ω·cm, and the transmittance was more than 90% in most of the visible range (450–700 nm). © 1990 IOP Publishing Ltd.

引用

页码：L355 / L357

页数：3

共 4 条

[1] CHEMICAL VAPOR-DEPOSITION OF TRANSPARENT ELECTRICALLY CONDUCTING LAYERS OF INDIUM OXIDE DOPED WITH TIN [J].

KANE, J ;

SCHWEIZER, HP ;

KERN, W .

THIN SOLID FILMS, 1975, 29 (01) :155-163

[2] SILICON DIOXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM SILICON TETRAACETATE [J].

MARUYAMA, T ;

SHIONOYA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2253-L2254

[3] PLASMA METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INDIUM OXIDE THIN-FILMS [J].

MARUYAMA, T ;

KITAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1096-L1097

[4]

PRIVMAN M, 1982, THIN SOLID FILMS, V102, P117

← 1 →