Modeling disorder in graphene

被引:326
作者
Pereira, Vitor M. [1 ]
dos Santos, J. M. B. Lopes [2 ,3 ]
Castro Neto, A. H. [1 ]
机构
[1] Boston Univ, Dept Phys, 590 Commonwealth Ave, Boston, MA 02215 USA
[2] Univ Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
[3] Univ Porto, Fac Ciencias, Dept Fis, P-4169007 Oporto, Portugal
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.77.115109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies (random, compensated, and uncompensated), local impurities, and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of graphene, viz., localized zero modes, strong resonances, gap and pseudogap behaviors, and nondispersive midgap zero modes.
引用
收藏
页数:17
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