High-efficiency Cu(InGa)Se2 solar cells with a zinc-based buffer layer

被引：21

作者：

Yamada, A ^{[1
]}

Miyazaki, H ^{[1
]}

Chiba, Y ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Res Ctr Quantum Nanoelect, Meguro Ku, Tokyo 1528552, Japan

来源：

THIN SOLID FILMS | 2005年 / 480卷

关键词：

solar cells; zinc oxide; chemical bath deposition;

D O I：

10.1016/j.tsf.2004.11.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide was grown by a chemical bath deposition (CBD) method. Smooth films were obtained by a mixed solution with zinc acetate (Zn(CH3COO)(2)) and ammonia (NH4OH). The films were preferentially oriented towards the [002] direction. The concentrations of Zn2+ and zinc complexes in a solution were numerically calculated, and it was found that the most suitable film precursor for CBD-ZnO process was Zn(OH)(2). A high efficiency of 14.3% was obtained by using CBD-ZnO as a buffer layer for Cu(InGa)(SSe)(2) solar cells. Magnesium hydroxide was also grown by a CBD process with magnesium acetate (Mg(CH3COO)(2)) as a magnesium source. The pH level, which was adjusted by the ammonia concentration, was a critical parameter for crystal growth. The surface of a sample grown with a pH level of 10.1 showed platelet-type morphology, and the film conformally coated the surface. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：503 / 508

页数：6

共 15 条

[1] Cu(InGa)Se2 thin-film solar cells with high resistivity ZnO buffer layers deposited by atomic layer deposition [J].