Properties of Al-doped ZnO thin films deposited by a chemical spray process

被引:41
作者
Gomez, H.
Maldonado, A.
Castanedo-Perez, R.
Torres-Delgado, G.
Olvera, M. de la L.
机构
[1] IPN, CINVESTAV, Dept Ingn Electr, SEES, Mexico City 07000, DF, Mexico
[2] IPN, CINVESTAV, Lab Invest Mat, Queretaro 76001, Qro, Mexico
关键词
zinc oxide; thin films; chemical spray;
D O I
10.1016/j.matchar.2006.11.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemically sprayed aluminum-doped zinc oxide thin films were deposited on glass substrates. The effect of the deposition conditions and the post annealing treatment in vacuum on the electrical, optical, structural and morphologic properties have been analyzed. The films were prepared using two Zn reactants, namely zinc acetate A(Zn) and zinc pentanedionate P(Zn). Aluminum pentanedionate P(Al) was used as the dopant source in both cases. The results show that the doping and annealing of the ZnO thin films enhance mainly the electrical properties. Under optimum deposition conditions a low resistivity and a high optical transmittance of the order of 1.8 X 10(-2) Omega cm and 85%, respectively, were obtained. No significant changes in the optical properties were observed as a consequence of the annealing treatments. All the films show a crystalline structure with a preferred (002) growth i.e. the c-axis is oriented normal to the substrate plane in all the cases. (C) 2006 Elsevier Inc. All rights reserved.
引用
收藏
页码:708 / 714
页数:7
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