Low-resistivity ZnO:F:Al transparent thin films

被引：56

作者：

Altamirano-Juárez, DC ^{[1
]}

Torres-Delgado, G ^{[1
]}

Jiménez-Sandoval, S ^{[1
]}

Jiménez-Sandoval, O ^{[1
]}

Castanedo-Pérez, R ^{[1
]}

机构：

[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Unidad Queretaro, Queretaro 76001, Qro, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 82卷 / 1-2期

关键词：

ZnO films; sol-gel; transparent conductive oxides;

D O I：

10.1016/j.solmat.2004.01.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline ZnO thin films doped with Al and F in nominal concentrations of 0.25 at% each element, have been obtained by the sol-gel technique. The films show a good adherence to the substrate, transmissions higher than 90% for wavelengths above 430 nm, and low resistivities: 8.6 x 10(-3) Omegacm in darkness, and 5.6 x 10(-3) Omegacm under controlled illumination. These values are among the lowest obtained to date for doped ZNO. The mobility, 27cm(2)/Vs, is one of the highest reported for this kind of materials. When both dopants, Al and F, are present in small quantities, they contribute to the resistivity decrease of the ZnO films, while the high optical transmission is maintained. Due to their good optical and electrical properties, ZnO:F:Al films are promising candidates for their use as transparent electrodes ill solar cells. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：35 / 43

页数：9

共 26 条

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