Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)

被引：24

作者：

Zhu, XD ^{[1
]}

Si, WD

Xi, XX

Jiang, QD

机构：

[1] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Univ Houston, Dept Chem, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1338497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 monolayer may take a much longer time to complete than the recrystallization of the monolayer. The oxidation reaction was found to be characterized by an effective activation energy barrier of 1.35 eV and a large preexponential factor. (C) 2001 American Institute of Physics.

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页码：460 / 462

页数：3

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