Atomic-level engineering of cuprates and manganites

被引:35
作者
Bozovic, I
Eckstein, JN
机构
[1] Varian Research Center, Palo Alto
关键词
MBE; cuprate superconductors; manganites; nanoengineering;
D O I
10.1016/S0169-4332(96)00874-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using ALL-MBE, we have engineered a novel, artificial (metastable) cuprate superconductor, BiSr2Ca7-xDyxCu8O19+y, in which only the central Ca layer is doped by Dy. This provides, within a single unit cell, the bottom superconducting electrode, an insulating barrier layer (only few A thick), and the top superconducting electrode, thus constituting an artificial intra-cell Josephson junction. In this way, we have fabricated the first high-T-C tunnel (SIS) junctions. They exhibit significant Josephson supercurrents and very sharp quasiparticle tunneling I-V characteristics. Next, single-crystal thin films of manganites grown by ALL-MBE have shown remarkable anisotropy of colossal magnetoresistance (CMR). We have also fabricated lateral superlattices with alternating stripes (nano-wires) of La1-xCaxMnO3 and La1-xSrxMnO3, few tens of nanometers wide. They show substantial in-plane anisotropy in transport properties, and a fivefold increase in low-field sensitivity. Our most recent results include successful growth of La1-xSrxMnO3 on top of Bi2Sr2CaCu2O8, and vice versa.
引用
收藏
页码:189 / 197
页数:9
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